Metal-Oxide-Semiconductor相关论文
Germanium is a promising candidate to replace silicon in nanoelectronics due to its significantly higher electron and ho......
A review of rare-earth oxide films as high k dielectrics in MOS devices—Commemorating the 100th anni
Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metal-oxide-semiconductor(......
,Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded
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The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator(SOI) metaloxide-s......
金属氧化物半导体（MOS）气敏传感器的稳定性是气敏器件实用化进程中最具有挑战性的因素。影响器件稳定性的主要因素包括颗粒尺寸、颈......
Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals;therefore, they are pow......
利用脉冲激光沉积技术在高电导P-Si和绝缘体Si O2上沉积了Mg O非晶薄膜,并对Si O2上的Mg O薄膜进行了透过率及XRD表征。构造了金属......
Growing a silicon (Si) layer on top of stacked Si-germanium (Ge) compressive layer can introduce a tensile strain on the......
